BSS306N и другие
| Компонент | Описание | Производитель | |
| 1SS306 | Silicon Epitaxial Planar Type |
Guangdong Kexin Industrial Co.,Ltd |
 |
| 1SS306 | High Voltage, High Speed Switching Applications |
Toshiba Semiconductor |
|
| 1SS306 | DIODE (HIGH VOLTAGE, HIGH SPEED SWITCHING APLICATIONS) |
Toshiba Semiconductor |
|
| 1SS306_07 | High Voltage, High Speed Switching Applications |
Toshiba Semiconductor |
|
| BSS306N | OptiMOS2 Small-Signal-Transistor |
Infineon Technologies AG |
|
| DSS306-351Y5S101M100 | FERRITE BEAD INDUCTORS, EMI SUPPRESSION FILTER COMPACT DISC-TYPE |
Murata Manufacturing Co., Ltd. |
|
| PBSS306NX | 100 V, 4.5 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
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| PBSS306NZ | 100 V, 5.1 A NPN low VCEsat (BISS) transistor |
NXP Semiconductors |
|
| PBSS306PX | 100 V, 3.7 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
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| PBSS306PZ | 100 V, 4.1 A PNP low VCEsat (BISS) transistor |
NXP Semiconductors |
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