BF1109R datasheet - N-channel dual-gate MOS-FETs | BF1109R.pdf by NXP Semiconductors | BF1109R documentation view on EHAM.RU

BF1109R - N-channel dual-gate MOS-FETs

BF1109R datasheet - N-channel dual-gate MOS-FETs

Название/Part No:

BF1109R

Описание/Description:

N-channel dual-gate MOS-FETs

Производитель/Maker:

NXP Semiconductors (PHILIPS)

Ссылка на datasheet:

BF1109R и другие

Компонент	Описание	Производитель	PDF
189-015NF1109-3B	Environmental Banding Backshell	Glenair, Inc.
189-015NF1109-3B	Environmental Banding Backshell	Glenair, Inc.
189HM016NF1109-3B	Backshell with Banding Strain Relief Environmental Resistant	Glenair, Inc.
189HM037NF1109-3B	Environmental Backshell with Banding Strain Relief	Glenair, Inc.
189HN016NF1109-3B	Backshell with Banding Strain Relief Environmental Resistant	Glenair, Inc.
189HN037NF1109-3B	Environmental Backshell with Banding Strain Relief	Glenair, Inc.
189HS016NF1109-3B	Backshell with Banding Strain Relief Environmental Resistant	Glenair, Inc.
189HS037NF1109-3B	Environmental Backshell with Banding Strain Relief	Glenair, Inc.
BF1109	N-channel dual-gate MOS-FETs	NXP Semiconductors
BF1109R	N-channel dual-gate MOS-FETs	NXP Semiconductors