B32652 и другие
| Компонент | Описание | Производитель | |
| 0022283265 | 2.54mm (.100) Pitch KK^ Header, Breakaway, Vertical, with Polarizing Wall, 26 Circuits, 0.76lm (30l) Gold (Au) Selective Plating, with Kinked PC Tails |
Molex Electronics Ltd. |
 |
| 0022503265 | 2.54mm (.100") KK^ IDT Double Cantilever Contact, 26 Circuits, Tin (Sn), FeedThrough, Friction Ramp and Polarizing Rib |
Molex Electronics Ltd. |
|
| 0326.500HXP | 325/326 Series Lead-Free 3AB, Slo-Blo^ Fuse |
Littelfuse |
|
| 0326.500MXP | 325/326 Series Lead-Free 3AB, Slo-Blo^ Fuse |
Littelfuse |
|
| 0877593265 | 2.00mm (.079) Pitch Milli-Grid Header, Surface Mount, Vertical, 32 Circuits, 0.76lm (30l) Gold (Au) Selective Plating, without Press-fit Plastic Pegs |
Molex Electronics Ltd. |
|
| 1N3265 | SILICON POWER RECTIFIER |
Microsemi Corporation |
|
| 1N3265R | 300V, 160A general purpose single diode |
Powerex Power Semiconductors |
|
| 22-28-3265 | 2.54mm (.100) Pitch KK^ Header, Breakaway, Vertical, with Polarizing Wall, 26 Circuits, 0.76lm (30l) Gold (Au) Selective Plating, with Kinked PC Tails |
Molex Electronics Ltd. |
|
| 22-50-3265 | 2.54mm (.100") KK^ IDT Double Cantilever Contact, 26 Circuits, Tin (Sn), FeedThrough, Friction Ramp and Polarizing Rib |
Molex Electronics Ltd. |
|
| 2SC3265 | NPN EPITAXIAL TYPE (LOW FREQUENCY POWER AMPLIFIER, POWER SWITCHING APPLICATIONS) |
Toshiba Semiconductor |
|