1N367 datasheet

1N367 - GOLD BONDED DIODES(Low forward voltage, low power consumption)

Название/Part No:

1N367

Описание/Description:

GOLD BONDED DIODES(Low forward voltage, low power consumption)

Производитель/Maker:

List of Unclassifed Manufacturers (ETC)

Ссылка на datasheet:

1N367 и другие

Компонент	Описание	Производитель	PDF
0757830110	0.80mm (.031") Pitch, iPass I/O SMT Receptacle, Right Angle, Internal Application36 Circuit, 0.38lm (15l") Gold (Au), SMT Shell, Left Key	Molex Electronics Ltd.
0757830122	0.80mm (.031") Pitch, iPass I/O SMT Receptacle, Right Angle, Internal Application36 Circuit, 0.76lm (30l") Gold (Au), SMT Shell, Left Key	Molex Electronics Ltd.
0757830123	0.80mm (.031") Pitch, iPass I/O SMT Receptacle, Right Angle, Internal Application36 Circuit, 0.76lm (30l") Gold (Au), SMT Shell, Right Key	Molex Electronics Ltd.
0757830129	0.80mm (.031") Pitch, iPass I/O SMT Receptacle, Right Angle, Internal Application36 Circuit, 0.38lm (15l") Gold (Au), Through Hole Shell, Left Key	Molex Electronics Ltd.
0757830134	0.80mm (.031") Pitch, iPass I/O SMT Receptacle, Right Angle, Internal Application36 Circuit, 0.76lm (30l") Gold (Au), Through Hole Shell, Right Key	Molex Electronics Ltd.
0757830157	0.80mm (.031") Pitch, iPass I/O SMT Receptacle, Right Angle, Internal Application36 Circuit, 0.76lm (30l") Gold (Au), Through Hole Shell, Left Key	Molex Electronics Ltd.
1N3600	Fast Rectifier	New Jersey Semi-Conductor Products, Inc.
1N3600	Diode Data	National Semiconductor
1N3600	200mA Low Power, Switching	Microsemi Corporation
1N3600	General Purpose Diodes	Fairchild Semiconductor