| Компонент | Описание | Производитель | |
| CM350DU-5F | Trench Gate Design Dual IGBTMOD 350 Amperes/250 Volts |
Powerex Power Semiconductors |
|
| CM350DU-5F | HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Semiconductor |
|
| CM350DU-5F | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Semiconductor |
|
| CM350DU-5F_09 | IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE |
Mitsubishi Electric Semiconductor |