DSI35 и другие
| Компонент | Описание | Производитель | |
| 28C256ASI-3 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
List of Unclassifed Manufacturers |
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| 28C256ASI-3 | High speed 200 ns CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
List of Unclassifed Manufacturers |
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| 28C64ASI-3 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. |
List of Unclassifed Manufacturers |
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| 28C64ASI-3 | High speed 200 ns CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM |
List of Unclassifed Manufacturers |
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| 28LV256SI-3 | Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM |
List of Unclassifed Manufacturers |
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| 28LV256SI-3 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns. |
List of Unclassifed Manufacturers |
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| 28LV64SI-3 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 200 ns. |
List of Unclassifed Manufacturers |
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| 28LV64SI-3 | Speed: 200 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM |
List of Unclassifed Manufacturers |
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| AN273 | GR-909 TESTING WITH THE Si321X PROSLIC^ |
Silicon Laboratories |
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| AN296 | USING THE Si3400 AND Si3401 POE PD CONTROLLERS IN ISOLATED AND NON-ISOLATED DESIGNS |
Silicon Laboratories |
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