G7E3 и другие
| Компонент | Описание | Производитель | |
| G7E3 | Silicon Power Rectifiers |
Edal Industries, Inc. |
 |
| JXWBKG-7-E14-111 | Reflective Switches 0.02 to 18GHz |
American Accurate Components, Inc. |
|
| JXWBKG-7-E23-111 | Absorptive Switches 0.02 to 18GHz |
American Accurate Components, Inc. |
|
| K4X56323PG-7EC3 | 8M x32 Mobile-DDR SDRAM |
Samsung semiconductor |
|
| K4X56323PG-7ECA | 8M x32 Mobile-DDR SDRAM |
Samsung semiconductor |
|
| MT28S2M32B1LCFG-7E | 512K x 32 x 4banks, 143MHz syncflash memory |
Micron Technology |
|
| MT28S2M32B1LCTG-7E | 512K x 32 x 4banks, 143MHz syncflash memory |
Micron Technology |
|
| MT28S2M32B1LCTG-7EET | 512K x 32 x 4banks, 143MHz syncflash memory |
Micron Technology |
|
| MT28S4M16B1LCFG-7EET | 1Meg x 16 x 4banks, 143MHz syncflash memory |
Micron Technology |
|
| MT28S4M16B1LCTG-7E | 1Meg x 16 x 4banks, 143MHz syncflash memory |
Micron Technology |
|