G2N3906 и другие
| Компонент | Описание | Производитель | |
| 2N3902 | HIGH VOLTAGE NPN SILICON TRANSISTORS |
Boca Semiconductor Corporation |
 |
| 2N3902 | Bipolar NPN Device in a Hermetically sealed TO3 |
Seme LAB |
|
| 2N3902 | SI NPN POWER BJT, I(C) = 2.5A TO 4.9A |
New Jersey Semi-Conductor Products, Inc. |
|
| 2N3903 | Si-Epitaxial PlanarTransistors |
Diotec Semiconductor |
|
| 2N3903 | NPN General Purpose Amplifier |
Fairchild Semiconductor |
|
| 2N3903 | General Purpose Transistors |
ON Semiconductor |
|
| 2N3903 | NPN General Purpose Amplifier |
Fairchild Semiconductor |
|
| 2N3903 | General Purpose Transistors(NPN Silicon) |
ON Semiconductor |
|
| 2N3903 | General Purpose Transistors NPN Silicon |
ON Semiconductor |
|
| 2N3903 | npn epitaxial silicon transistor |
Samsung semiconductor |
|