GT10J321 datasheet

GT10J321 - Silicon N Channel IGBT High Power Switching Applications

Название/Part No:

GT10J321

Описание/Description:

Silicon N Channel IGBT High Power Switching Applications

Производитель/Maker:

Toshiba Semiconductor (TOSHIBA)

Ссылка на datasheet:

GT10J321 и другие

Компонент	Описание	Производитель	PDF
GT10J321	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT	Toshiba Semiconductor
GT10J321	Silicon N Channel IGBT High Power Switching Applications	Toshiba Semiconductor
GT10J321_06	Silicon N Channel IGBT High Power Switching Applications	Toshiba Semiconductor