GT30J324 datasheet

GT30J324 - Silicon N Channel IGBT High Power Switching Applications

Название/Part No:

GT30J324

Описание/Description:

Silicon N Channel IGBT High Power Switching Applications

Производитель/Maker:

Toshiba Semiconductor (TOSHIBA)

Ссылка на datasheet:

GT30J324 и другие

Компонент	Описание	Производитель	PDF
GT30J322	N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)	Toshiba Semiconductor
GT30J324	Silicon N Channel IGBT High Power Switching Applications	Toshiba Semiconductor
GT30J324	Insulated Gate Bipolar Transistor Silicon N Channel IGBT	Toshiba Semiconductor
GT30J324_06	Silicon N Channel IGBT High Power Switching Applications	Toshiba Semiconductor