GM3669 и другие
| Компонент | Описание | Производитель | |
| DS_M366S2953MTS | PC133/PC100 Unbuffered DIMM |
Samsung semiconductor |
 |
| ELM36600EA-S | Complementary MOSFET |
ELM Technology Corporation |
|
| ELM36601EA-S | Complementary MOSFET |
ELM Technology Corporation |
|
| GM3669 | NPN EPITAXIAL PLANAR TRANSISTOR |
GTM CORPORATION |
|
| HM3669 | NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Mocroelectronics |
|
| KMM366S1623AT | 16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
Samsung semiconductor |
|
| KMM366S1623AT-G0 | 16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
Samsung semiconductor |
|
| KMM366S1623AT-G2 | 16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
Samsung semiconductor |
|
| KMM366S1623AT-G8 | 16Mx64 SDRAM DIMM based on 8Mx8 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD |
Samsung semiconductor |
|
| KMM366S1623BT | PC100 SDRAM MODULE |
Samsung semiconductor |
|