GT50J327 и другие
| Компонент | Описание | Производитель | |
| GT50J322 | SILICON N CHANNEL IGBT FOURTH GENERATION IGBT |
Toshiba Semiconductor |
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| GT50J322 | N CHANNEL MOS TYPE (THE 4TH CENERATION CURRENT RESONACE INVERTER SWITHCING APPLICATIONS) |
Toshiba Semiconductor |
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| GT50J322_06 | SILICON N CHANNEL IGBT FOURTH GENERATION IGBT |
Toshiba Semiconductor |
|
| GT50J325 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT |
Toshiba Semiconductor |
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| GT50J325 | Silicon N Channel IGBT High Power Switching Applications |
Toshiba Semiconductor |
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| GT50J325_06 | Silicon N Channel IGBT High Power Switching Applications |
Toshiba Semiconductor |
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| GT50J327 | TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Current Resonance Inverter Switching Application |
Toshiba Semiconductor |
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