GT30J122 datasheet

GT30J122 - 4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING

Название/Part No:

GT30J122

Описание/Description:

4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING

Производитель/Maker:

Toshiba Semiconductor (TOSHIBA)

Ссылка на datasheet:

GT30J122 и другие

Компонент	Описание	Производитель	PDF
GT30J121	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT	Toshiba Semiconductor
GT30J121_06	Silicon N Channel IGBT High Power Switching Applications	Toshiba Semiconductor
GT30J122	4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING	Toshiba Semiconductor