GT60M322 datasheet

GT60M322 - TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Название/Part No:

GT60M322

Описание/Description:

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

Производитель/Maker:

Toshiba Semiconductor (TOSHIBA)

Ссылка на datasheet:

GT60M322 и другие

Компонент	Описание	Производитель	PDF
GT60M322	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT	Toshiba Semiconductor
GT60M323	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT	Toshiba Semiconductor
GT60M323	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application	Toshiba Semiconductor
GT60M323_06	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application	Toshiba Semiconductor