HY57V281620ET Datasheet

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HY57V281620ET - 128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O




Название/Part No:
HY57V281620ET

Описание/Description:
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O

Производитель/Maker:
Hynix Semiconductor (HYNIX)

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HY57V281620ET и другие

Компонент Описание Производитель PDF
HY57V281620ELT
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Hynix Semiconductor
HY57V281620ELT-5
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Hynix Semiconductor
HY57V281620ELT-6
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Hynix Semiconductor
HY57V281620ELT-7
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Hynix Semiconductor
HY57V281620ELT-H
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Hynix Semiconductor
HY57V281620ELTP-5
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Hynix Semiconductor
HY57V281620ELTP-6
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Hynix Semiconductor
HY57V281620ELTP-7
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Hynix Semiconductor
HY57V281620ELTP-H
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Hynix Semiconductor
HY57V281620ET
128Mb Synchronous DRAM based on 2M x 4Bank x16 I/O
Hynix Semiconductor

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