HE554B и другие
| Компонент | Описание | Производитель | |
| AXE554124 | The 2.5 mm wide ultra-slim body contributes to further contributes to further enhancement of target equipment. |
Panasonic Semiconductor |
 |
| HE554 | Low Noise Amplifier |
BOWEI Integrated Circuits CO.,LTD. |
|
| HE554B | Low Noise Amplifier |
BOWEI Integrated Circuits CO.,LTD. |
|
| MIE-554A4 | Infrared emitting diode |
Unity Opto Technology |
|
| MIE-554A4 | Infrared emitting diode |
Unity Opto Technology |
|
| MIE-554H4 | GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE |
Unity Opto Technology |
|
| MIE-554L3 | GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE |
Unity Opto Technology |
|
| NCE5549 | NCE N-Channel Enhancement Mode Power MOSFET |
Wuxi NCE Power Semiconductor Co., Ltd |
|
| NE55410GR | N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER |
NEC |
|
| NE55410GR | N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER |
California Eastern Labs |
|