IRG4BC10SD и другие
| Компонент | Описание | Производитель | |
| IRG4BC10S | INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT(Vces=600V, Vce(on)typ.1.10V, @Vge=15V, Ic=2.0A) |
International Rectifier |
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| IRG4BC10SD | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
International Rectifier |
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| IRG4BC10SD-L | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) |
International Rectifier |
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| IRG4BC10SD-L | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
International Rectifier |
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| IRG4BC10SD-LPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
International Rectifier |
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| IRG4BC10SD-S | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
International Rectifier |
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| IRG4BC10SD-S | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.10V, @Vge=15V, Ic=2.0A) |
International Rectifier |
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| IRG4BC10SD-SPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
International Rectifier |
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| IRG4BC10SDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
International Rectifier |
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| IRG4BC10SPBF | INSULATED GATE BIPOLAR TRANSISTOR |
International Rectifier |
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