IFN423 datasheet - Dual N-Channel silicon junction field-effect transistor | IFN423.pdf by InterFET Corporation | IFN423 documentation view on EHAM.RU

IFN423 - Dual N-Channel silicon junction field-effect transistor

IFN423 datasheet - Dual N-Channel silicon junction field-effect transistor

Название/Part No:

IFN423

Описание/Description:

Dual N-Channel silicon junction field-effect transistor

Производитель/Maker:

InterFET Corporation (INTERFET)

Ссылка на datasheet:

IFN423 и другие

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447FN425NF10	EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief	Glenair, Inc.
447FN425NF12	EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief	Glenair, Inc.
447FN425NF14	EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief	Glenair, Inc.
447FN425NF16	EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief	Glenair, Inc.
447FN425NF18	EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief	Glenair, Inc.
447FN425NF20	EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief	Glenair, Inc.
447FN425NF22	EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief	Glenair, Inc.
447FN425NF24	EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief	Glenair, Inc.
447FN427NF08	EMI/RFI Non-Environmental Band-in-a-Can Backshell with Cable Clamp Strain-Relief	Glenair, Inc.