K4R441869AN-CK7 datasheet

K4R441869AN-CK7 - 256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.

Название/Part No:

K4R441869AN-CK7

Описание/Description:

256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

K4R441869AN-CK7 и другие

Компонент	Описание	Производитель	PDF
K4R441869AN-CK7	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.	Samsung semiconductor
K4R441869AN-CK8	256K x 18 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.	Samsung semiconductor