K4E660412D datasheet - 16M x 4bit CMOS Dynamic RAM with Extended Data Out | K4E660412D.pdf by Samsung semiconductor | K4E660412D documentation view on EHAM.RU

K4E660412D - 16M x 4bit CMOS Dynamic RAM with Extended Data Out

K4E660412D datasheet - 16M x 4bit CMOS Dynamic RAM with Extended Data Out

Название/Part No:

K4E660412D

Описание/Description:

16M x 4bit CMOS Dynamic RAM with Extended Data Out

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

~/K4E660412D.pdf

K4E660412D и другие

Компонент	Описание	Производитель	PDF
K4E660412D	16M x 4bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor
K4E660412D-JC/L	16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle.	Samsung semiconductor
K4E660412D-TC/L	16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 8K refresh cycle.	Samsung semiconductor
K4E660412E	16M x 4bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor
K4E660412E-JI45	16M x 4bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor
K4E660412E-JI50	16M x 4bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor
K4E660412E-JI60	16M x 4bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor
K4E660412E-JP45	16M x 4bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor
K4E660412E-JP50	16M x 4bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor
K4E660412E-JP60	16M x 4bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor