K4E660812B-TC-6 datasheet

K4E660812B-TC-6 - 8M x 8bit CMOS dynamic RAM with extended data out, 60ns

Название/Part No:

K4E660812B-TC-6

Описание/Description:

8M x 8bit CMOS dynamic RAM with extended data out, 60ns

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

K4E660812B-TC-6 и другие

Компонент	Описание	Производитель	PDF
K4E660812B-TC-45	8M x 8bit CMOS dynamic RAM with extended data out, 45ns	Samsung semiconductor
K4E660812B-TC-5	8M x 8bit CMOS dynamic RAM with extended data out, 50ns	Samsung semiconductor
K4E660812B-TC-6	8M x 8bit CMOS dynamic RAM with extended data out, 60ns	Samsung semiconductor
K4E660812B-TC-6	8M x 8bit CMOS dynamic RAM with extended data out, 60ns	Samsung semiconductor
K4E660812B-TCL-45	8M x 8bit CMOS dynamic RAM with extended data out, 45ns	Samsung semiconductor
K4E660812B-TCL-5	8M x 8bit CMOS dynamic RAM with extended data out, 50ns	Samsung semiconductor
K4E660812B-TCL-6	8M x 8bit CMOS dynamic RAM with extended data out, 60ns	Samsung semiconductor