K4F160411D-B datasheet

K4F160411D-B - 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.

Название/Part No:

K4F160411D-B

Описание/Description:

4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

K4F160411D-B и другие

Компонент	Описание	Производитель	PDF
K4F160411D	4M x 4Bit CMOS Dynamic RAM with Fast Page Mode	Samsung semiconductor
K4F160411D-B	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.	Samsung semiconductor
K4F160411D-B	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.	Samsung semiconductor
K4F160411D-F	4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.	Samsung semiconductor