K4E171612D-T datasheet

K4E171612D-T - 1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

Название/Part No:

K4E171612D-T

Описание/Description:

1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

K4E171612D-T и другие

Компонент	Описание	Производитель	PDF
K4E171612D	1M x 16Bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor
K4E171612D-J	1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.	Samsung semiconductor
K4E171612D-T	1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.	Samsung semiconductor
K4E171612D-T	1M x 16 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.	Samsung semiconductor