K4E641612B-TC datasheet

K4E641612B-TC - 4M x 16bit CMOS Dynamic RAM with Extended Data Out

Название/Part No:

K4E641612B-TC

Описание/Description:

4M x 16bit CMOS Dynamic RAM with Extended Data Out

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

K4E641612B-TC и другие

Компонент	Описание	Производитель	PDF
K4E641612B-TC	4M x 16bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor
K4E641612B-TC45	4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns	Samsung semiconductor
K4E641612B-TC50	4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns	Samsung semiconductor
K4E641612B-TC60	4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns	Samsung semiconductor
K4E641612B-TL45	4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 45ns, low power	Samsung semiconductor
K4E641612B-TL50	4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 50ns, low power	Samsung semiconductor
K4E641612B-TL60	4M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low power	Samsung semiconductor