K4E170812D-F datasheet

K4E170812D-F - 2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

Название/Part No:

K4E170812D-F

Описание/Description:

2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

K4E170812D-F и другие

Компонент	Описание	Производитель	PDF
K4E170812D	2M x 8Bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor
K4E170812D-B	2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.	Samsung semiconductor
K4E170812D-F	2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.	Samsung semiconductor