K4F160811D-F datasheet

K4F160811D-F - 2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.

Название/Part No:

K4F160811D-F

Описание/Description:

2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

K4F160811D-F и другие

Компонент	Описание	Производитель	PDF
K4F160811D	2M x 8Bit CMOS Dynamic RAM with Fast Page Mode	Samsung semiconductor
K4F160811D-B	2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.	Samsung semiconductor
K4F160811D-F	2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.	Samsung semiconductor