K7M163635B datasheet - 512Kx36 & 1Mx18 Flow-Through NtRAM | K7M163635B.pdf by Samsung semiconductor | K7M163635B documentation view on EHAM.RU

K7M163635B - 512Kx36 & 1Mx18 Flow-Through NtRAM

K7M163635B datasheet - 512Kx36 & 1Mx18 Flow-Through NtRAM

Название/Part No:

K7M163635B

Описание/Description:

512Kx36 & 1Mx18 Flow-Through NtRAM

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

~/K7M163635B.pdf

K7M163635B и другие

Компонент	Описание	Производитель	PDF
K7M163635B	512Kx36 & 1Mx18 Flow-Through NtRAM	Samsung semiconductor
K7M163635B-PC65	512Kx36 & 1Mx18 Flow-Through NtRAM	Samsung semiconductor
K7M163635B-PI65	512Kx36 & 1Mx18 Flow-Through NtRAM	Samsung semiconductor
K7M163635B-QC65	512Kx36 & 1Mx18 Pipelined NtRAM	Samsung semiconductor
K7M163635B-QCI65	512Kx36 & 1Mx18 Pipelined NtRAM	Samsung semiconductor
K7M163635B-QI65	512Kx36 & 1Mx18 Flow-Through NtRAM	Samsung semiconductor