K4E170411D datasheet

K4E170411D - 4M x 4Bit CMOS Dynamic RAM with Extended Data Out

Название/Part No:

K4E170411D

Описание/Description:

4M x 4Bit CMOS Dynamic RAM with Extended Data Out

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

K4E170411D и другие

Компонент	Описание	Производитель	PDF
K4E170411D	4M x 4Bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor
K4E170411D-B	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.	Samsung semiconductor
K4E170411D-B	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.	Samsung semiconductor
K4E170411D-F	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.	Samsung semiconductor
K4E170411D-F	4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.	Samsung semiconductor