KM416C1204CJ-6 datasheet

KM416C1204CJ-6 - 5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

Название/Part No:

KM416C1204CJ-6

Описание/Description:

5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns

Производитель/Maker:

Samsung semiconductor (SAMSUNG)

Ссылка на datasheet:

KM416C1204CJ-6 и другие

Компонент	Описание	Производитель	PDF
KM416C1204CJ-45	1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16ms	Samsung semiconductor
KM416C1204CJ-5	5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns	Samsung semiconductor
KM416C1204CJ-50	1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16ms	Samsung semiconductor
KM416C1204CJ-6	5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns	Samsung semiconductor
KM416C1204CJ-60	1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=16ms	Samsung semiconductor
KM416C1204CJ-L45	5V, 1M x 16 bit CMOS DRAM with extended data out, 45ns	Samsung semiconductor
KM416C1204CJ-L5	5V, 1M x 16 bit CMOS DRAM with extended data out, 50ns	Samsung semiconductor
KM416C1204CJ-L6	5V, 1M x 16 bit CMOS DRAM with extended data out, 60ns	Samsung semiconductor
KM416C1204CJL-50	1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refresh	Samsung semiconductor
KM416C1204CJL-60	1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh	Samsung semiconductor