K4E160412D-B Datasheet

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K4E160412D-B - 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

K4E160412D-B datasheet - 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.



Название/Part No:
K4E160412D-B

Описание/Description:
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.

Производитель/Maker:
Samsung semiconductor (SAMSUNG)

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