LTI606 datasheet

LTI606 - 200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time

Название/Part No:

LTI606

Описание/Description:

200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time

Производитель/Maker:

Voltage Multipliers Inc. (VMI)

Ссылка на datasheet:

LTI606 и другие

Компонент	Описание	Производитель	PDF
3R3TI60E-080	DIODE and TYRISTOR MODULE	Fuji Electric
4R3TI60Y-080	DIODE and TYRISTOR MODULE	Fuji Electric
K4E640412E-TI60	16M x 4bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor
K4E660412E-TI60	16M x 4bit CMOS Dynamic RAM with Extended Data Out	Samsung semiconductor
K4S643232F-TI60	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL3.3V	Samsung semiconductor
LTI602	200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time	Voltage Multipliers Inc.
LTI602F	200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time	Voltage Multipliers Inc.
LTI602FT	200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time	Voltage Multipliers Inc.
LTI602T	200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time	Voltage Multipliers Inc.
LTI602UF	200 V - 1,000 V Three Phase Bridge 30.0 A - 40.0 A Forward Current 70 ns - 3000 ns Recovery Time	Voltage Multipliers Inc.