L8821P datasheet - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR | L8821P.pdf by Polyfet RF Devices | L8821P documentation view on EHAM.RU

L8821P - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

L8821P datasheet - SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Название/Part No:

L8821P

Описание/Description:

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

Производитель/Maker:

Polyfet RF Devices (POLYFET)

Ссылка на datasheet:

L8821P и другие

Компонент	Описание	Производитель	PDF
0015388210	2.54mm (.100") C-Grid SL Single Row, Female, Version G Receptacle, 21 Circuits	Molex Electronics Ltd.
0015388217	2.54mm (.100") C-Grid SL Single Row, Female, Version C Receptacle, 21 Circuits	Molex Electronics Ltd.
0015388218	2.54mm (.100") C-Grid SL Single Row, Female, Version A Receptacle, 21 Circuits	Molex Electronics Ltd.
0015388219	2.54mm (.100") C-Grid SL Single Row, Female, Version D Receptacle, 21 Circuits	Molex Electronics Ltd.
0022288210	2.54mm (.100") Pitch KK Header, Breakaway, Right Angle Surface Mount Compatible, 21 Circuits	Molex Electronics Ltd.
0022288211	2.54mm (.100") Pitch KK^	Molex Electronics Ltd.
015-38-8210	2.54mm (.100") C-Grid SL Single Row, Female, Version G Receptacle, 21 Circuits	Molex Electronics Ltd.
015-38-8217	2.54mm (.100") C-Grid SL Single Row, Female, Version C Receptacle, 21 Circuits	Molex Electronics Ltd.
015-38-8218	2.54mm (.100") C-Grid SL Single Row, Female, Version A Receptacle, 21 Circuits	Molex Electronics Ltd.
015-38-8219	2.54mm (.100") C-Grid SL Single Row, Female, Version D Receptacle, 21 Circuits	Molex Electronics Ltd.