| Компонент | Описание | Производитель | |
| HGTP10N120BN | 35A, 1200V, NPT Series N-Channel IGBT |
Fairchild Semiconductor |
|
| MTP10N10 | N-Channel Power MOSFETs, 11 A, 60-100 V |
Fairchild Semiconductor |
|
| MTP10N10E | TMOS POWER FETs 10 AMPERES 100 VOLTS RDS(on) = 0.25 OHM |
Motorola, Inc |
|
| MTP10N10EL | Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 |
ON Semiconductor |
|
| MTP10N10EL | TMOS POWER FET 10 AMPERES 100 VOLTS RDS(on) = 0.22 OHMS |
Motorola, Inc |
|
| MTP10N10ELG | Power MOSFET 10 A, 100 V, Logic Level, N−Channel TO−220 |
ON Semiconductor |
|
| MTP10N15 | POWER FIELD EFFECT TRANSISTOR |
Motorola, Inc |