MJD112G и другие
| Компонент | Описание | Производитель | |
| 6000-0JD1-12001 | J-Type Medallion 6000 1550 nm Externally Modulated Transmitter |
Emcore Corporation |
 |
| 6000-0JD1-12002 | J-Type Medallion 6000 1550 nm Externally Modulated Transmitter |
Emcore Corporation |
|
| 6000-0JD1-12003 | J-Type Medallion 6000 1550 nm Externally Modulated Transmitter |
Emcore Corporation |
|
| 6000-0JD1-12011 | J-Type Medallion 6000 1550 nm Externally Modulated Transmitter |
Emcore Corporation |
|
| 6000-0JD1-12012 | J-Type Medallion 6000 1550 nm Externally Modulated Transmitter |
Emcore Corporation |
|
| 6000-0JD1-12013 | J-Type Medallion 6000 1550 nm Externally Modulated Transmitter |
Emcore Corporation |
|
| CJD112 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR |
Central Semiconductor Corp |
|
| CJD112_10 | SURFACE MOUNT COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
Central Semiconductor Corp |
|
| MJD112 | EPITAXIAL PLANAR NPN TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.) |
KEC |
|
| MJD112 | SILICON POWER TRANSISTORS 2 AMPERES 100 VOLTS 20 WATTS |
Motorola, Inc |
|