MJE3055TG и другие
| Компонент | Описание | Производитель | |
| HMJE3055T | NPN EPITAXIAL PLANAR TRANSISTOR |
Hi-Sincerity Mocroelectronics |
 |
| MJE3055T | COMPLEMENTARY SILICON POWER TRANSISTORS |
STMicroelectronics |
|
| MJE3055T | Silicon NPN Power Transistors |
Savantic, Inc. |
|
| MJE3055T | General Purpose and Switching Applications |
Fairchild Semiconductor |
|
| MJE3055T | NPN (GENERAL PURPOSE AND SWITCHING APPLICATIONS) |
Samsung semiconductor |
|
| MJE3055T | HIGH VOLTAGE TRANSISTOR |
Unisonic Technologies |
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| MJE3055T | Complementary Silicon Power Ttransistors |
Tiger Electronic Co.,Ltd |
|
| MJE3055T | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS 75 WATTS |
Motorola, Inc |
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| MJE3055T | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
Dc Components |
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| MJE3055T | isc Silicon NPN Power Transistor |
Inchange Semiconductor Company Limited |
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