| Компонент | Описание | Производитель | |
| MTD6N10 | POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE, DPAK FOR SURFACE MOUNT OR INSERTION MOUNT |
Motorola, Inc |
|
| MTD6N10E | TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS(on) = 0.400 OHM |
Motorola, Inc |
|
| STD6N10 | N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
STMicroelectronics |