MM118-06F datasheet

MM118-06F - 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

Название/Part No:

MM118-06F

Описание/Description:

3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE

Производитель/Maker:

Microsemi Corporation (MICROSEMI)

Ссылка на datasheet:

MM118-06F и другие

Компонент	Описание	Производитель	PDF
MM118-06	3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE	Microsemi Corporation
MM118-06F	3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE	Microsemi Corporation
MM118-06L	3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE	Microsemi Corporation