2N6796 datasheet

2N6796 - 100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

Название/Part No:

2N6796

Описание/Description:

100 V, 200 V, 400 V & 500 V, N-Channel, Enhancement Mode MOSFET Power Transistor

Производитель/Maker:

List of Unclassifed Manufacturers (ETC)

Ссылка на datasheet:

2N6796 и другие

Компонент	Описание	Производитель	PDF
1N6791	SURFACE MOUNT LOW LEAKAGE SCHOTTKY DIODE	Microsemi Corporation
2N6790	NCHANNEL POWER MOSFET	Seme LAB
2N6790	3.5A, 200V, 0.800 Ohm, N-Channel Power	Fairchild Semiconductor
2N6792	N-Channel MOSFET in a Hermetically sealed TO39 Metal Package	Seme LAB
2N6793	N-CHANNEL ENHANCEMENT MOSFET	New Jersey Semi-Conductor Products, Inc.
2N6794	NCHANNEL ENHANCEMENT MODE POWER MOSFET	Seme LAB
2N6794	N-CHANNEL POWER MOSFET	New Jersey Semi-Conductor Products, Inc.
2N6794	N-CHANNEL POWER MOSFET	Seme LAB
2N6794LCC4	NCHANNEL POWER MOSFET	Seme LAB
2N6794_01	NCHANNEL ENHANCEMENT MODE POWER MOSFET	Seme LAB