NTE5851 datasheet

NTE5851 - Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.

Название/Part No:

NTE5851

Описание/Description:

Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.

Производитель/Maker:

NTE Electronics (NTE)

Ссылка на datasheet:

NTE5851 и другие

Компонент	Описание	Производитель	PDF
NTE585	Silicon Rectifier Diode Schottky Barrier, Fast Switching	NTE Electronics
NTE5850	Silicon Power Rectifier Diode, 6 Amp	NTE Electronics
NTE5851	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 50V. Average forward current 6A.	NTE Electronics
NTE5852	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.	NTE Electronics
NTE5853	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 6A.	NTE Electronics
NTE5854	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 6A.	NTE Electronics
NTE5856	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.	NTE Electronics
NTE5857	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 300V. Average forward current 6A.	NTE Electronics
NTE5858	Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.	NTE Electronics
NTE5859	Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 400V. Average forward current 6A.	NTE Electronics