2SC1959-Y и другие
| Компонент | Описание | Производитель | |
| 2SC1959 | Silicon PNP Epitaxial Type (PCT process) |
Toshiba Semiconductor |
 |
| 2SC1959 | NPN Plastic Encapsulated Transistor |
SeCoS Halbleitertechnologie GmbH |
|
| 2SC1959 | NPN EPITAXIAL PLANAR TRANSISTOR |
Tiger Electronic Co.,Ltd |
|
| 2SC1959 | Plastic-Encapsulated Transistors |
TRANSYS Electronics Limited |
|
| 2SC1959 | TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR |
Dc Components |
|
| 2SC1959 | TRANSISTOR (AUDIO FREQUENCY LOW POWER, DRIVER STAGE AMPLIFIER SWITCHING APPLICATIONS) |
Toshiba Semiconductor |
|
| 2SC1959-GR | Power Silicon NPN Transistor |
Micro Commercial Components |
|
| 2SC1959-O | Power Silicon NPN Transistor |
Micro Commercial Components |
|
| 2SC1959-Y | Power Silicon NPN Transistor |
Micro Commercial Components |
|
| 2SC1959_07 | Silicon PNP Epitaxial Type (PCT process) |
Toshiba Semiconductor |
|