2SC5606_1 Datasheet

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2SC5606_1 - NPN SILICON RF TRANSISTOR FOR LOW NOISE g HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)




Название/Part No:
2SC5606_1

Описание/Description:
NPN SILICON RF TRANSISTOR FOR LOW NOISE g HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)

Производитель/Maker:
NEC (NEC)

Ссылка на datasheet:

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2SC5606_1 и другие

Компонент Описание Производитель PDF
2SC5606
NPN SILICON RF TRANSISTOR FOR LOW NOISE g HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NEC
2SC5606
NPN SILICON RF TRANSISTOR FOR LOW NOISE g HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
NEC
2SC5606-A
NPN SILICON RF TRANSISTOR FOR LOW NOISE g HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NEC
2SC5606-T1
NPN SILICON RF TRANSISTOR FOR LOW NOISE g HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD
NEC
2SC5606-T1
NPN SILICON RF TRANSISTOR FOR LOW NOISE g HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NEC
2SC5606-T1-A
NPN SILICON RF TRANSISTOR FOR LOW NOISE g HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NEC
2SC5606_1
NPN SILICON RF TRANSISTOR FOR LOW NOISE g HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD (19, 1608 PKG)
NEC

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