PDTD123E datasheet

PDTD123E - NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kY, R2 = 2.2 kY

Название/Part No:

PDTD123E

Описание/Description:

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kY, R2 = 2.2 kY

Производитель/Maker:

NXP Semiconductors (NXP)

Ссылка на datasheet:

PDTD123E и другие

Компонент	Описание	Производитель	PDF
CHDTD123EKPT	NPN Digital Silicon Transistor	Chenmko Enterprise Co. Ltd.
CHDTD123TKPT	NPN Digital Silicon Transistor	Chenmko Enterprise Co. Ltd.
CHDTD123YKPT	NPN Digital Silicon Transistor	Chenmko Enterprise Co. Ltd.
DDTD123EC	NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR	Diodes Incorporated
DDTD123EC	NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR	Diodes Incorporated
DDTD123EC-7	NPN PRE-BIASED 500 mA SOT-23 SURFACE MOUNT TRANSISTOR	Diodes Incorporated
DDTD123EU	NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR	Diodes Incorporated
DDTD123EU	NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR	Diodes Incorporated
DDTD123EU-7	NPN PRE-BIASED 500 mA SOT-323 SURFACE MOUNT TRANSISTOR	Diodes Incorporated
DDTD123TC	NPN PRE-BIASED 500mA SURFACE MOUNT TRANSISTOR	Diodes Incorporated