PTF191601E datasheet

PTF191601E - Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

Название/Part No:

PTF191601E

Описание/Description:

Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz

Производитель/Maker:

Infineon Technologies AG (INFINEON)

Ссылка на datasheet:

PTF191601E и другие

Компонент	Описание	Производитель	PDF
PTF191601	LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz	Infineon Technologies AG
PTF191601E	LDMOS RF Power Field Effect Transistor 160 W, 1930-1990 MHz	Infineon Technologies AG
PTF191601E	Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz	Infineon Technologies AG
PTF191601F	Thermally-Enhnaced High Power RF LDMOS FETs 160 W, 1930-1990 MHz	Infineon Technologies AG