RJK0389DPA datasheet

RJK0389DPA - Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Название/Part No:

RJK0389DPA

Описание/Description:

Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

Производитель/Maker:

Renesas Technology Corp (RENESAS)

Ссылка на datasheet:

RJK0389DPA и другие

Компонент	Описание	Производитель	PDF
RJK0389DPA	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching	Renesas Technology Corp
RJK0389DPA	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching	Renesas Technology Corp
RJK0389DPA-00-J0	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching	Renesas Technology Corp
RJK0389DPA-00-J53	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching	Renesas Technology Corp
RJK0389DPA-00-J53	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching	Renesas Technology Corp
RJK0389DPA_09	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching	Renesas Technology Corp
RJK0389DPA_10	Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching	Renesas Technology Corp