RJK0206DPA datasheet

RJK0206DPA - Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Название/Part No:

RJK0206DPA

Описание/Description:

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Производитель/Maker:

Renesas Technology Corp (RENESAS)

Ссылка на datasheet:

RJK0206DPA и другие

Компонент	Описание	Производитель	PDF
RJK0206DPA	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching	Renesas Technology Corp
RJK0206DPA-00-J53	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching	Renesas Technology Corp