RJK03H1DPA datasheet

RJK03H1DPA - Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Название/Part No:

RJK03H1DPA

Описание/Description:

Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching

Производитель/Maker:

Renesas Technology Corp (RENESAS)

Ссылка на datasheet:

RJK03H1DPA и другие

Компонент	Описание	Производитель	PDF
RJK03H1DPA	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching	Renesas Technology Corp
RJK03H1DPA-00-J5A	Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching	Renesas Technology Corp