| Компонент | Описание | Производитель | |
| MGW20N60D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode |
Motorola, Inc |
|
| SGW20N60 | Fast S-IGBT in NPT-technology |
Infineon Technologies AG |
|
| SGW20N60 | Short Circuit Rated IGBT |
Fairchild Semiconductor |
|
| SGW20N60 | Fast IGBT in NPT-technology 75% lower Eoff compared to previous generation |
Infineon Technologies AG |
|
| SGW20N60HS | High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation |
Infineon Technologies AG |
|
| SGW20N60RUF | Short Circuit Rated IGBT |
Fairchild Semiconductor |