T10B120T datasheet

T10B120T - T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 110V,max. Ir = 50uA @ Vr = 120V,max, Tape and reeled (1500pcs).

Название/Part No:

T10B120T

Описание/Description:

T10B series Sibod, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 110V,max. Ir = 50uA @ Vr = 120V,max, Tape and reeled (1500pcs).

Производитель/Maker:

Littelfuse (LITTELFUSE)

Ссылка на datasheet:

~/T10B120T.pdf

T10B120T и другие

Компонент	Описание	Производитель	PDF
AM29F010B120DGC1	1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1	Advanced Micro Devices
AM29F010B120DGE1	1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1	Advanced Micro Devices
AM29F010B120DGI1	1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1	Advanced Micro Devices
AM29F010B120DPC1	1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1	Advanced Micro Devices
AM29F010B120DPE1	1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1	Advanced Micro Devices
AM29F010B120DPI1	1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1	Advanced Micro Devices
AM29F010B120DTC1	1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1	Advanced Micro Devices
AM29F010B120DTE1	1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1	Advanced Micro Devices
AM29F010B120DTI1	1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1	Advanced Micro Devices
AM29F010B120DWC1	1 Megabit (128 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory-Die Revision 1	Advanced Micro Devices

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T10B120T и другие

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