T10A120B datasheet

T10A120B - T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 108V,max. Ir = 50uA @ Vr = 120V,max, Bulk (500pcs).

Название/Part No:

T10A120B

Описание/Description:

T10A series SiBOD, glass passivated junction, bi-directional device for telephone and line card protection. Irm = 2uA @ Vrm = 108V,max. Ir = 50uA @ Vr = 120V,max, Bulk (500pcs).

Производитель/Maker:

Littelfuse (LITTELFUSE)

Ссылка на datasheet:

~/T10A120B.pdf

T10A120B и другие

Компонент	Описание	Производитель	PDF
AM28F010A-120EC	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms	Advanced Micro Devices
AM28F010A-120ECB	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms	Advanced Micro Devices
AM28F010A-120EE	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms	Advanced Micro Devices
AM28F010A-120EEB	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms	Advanced Micro Devices
AM28F010A-120EI	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms	Advanced Micro Devices
AM28F010A-120EIB	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms	Advanced Micro Devices
AM28F010A-120FC	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms	Advanced Micro Devices
AM28F010A-120FCB	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms	Advanced Micro Devices
AM28F010A-120FE	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms	Advanced Micro Devices
AM28F010A-120FEB	1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms	Advanced Micro Devices

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T10A120B и другие

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