V30120C-E3/4W datasheet

V30120C-E3/4W - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Название/Part No:

V30120C-E3/4W

Описание/Description:

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Производитель/Maker:

Vishay Siliconix (VISHAY)

Ссылка на datasheet:

V30120C-E3/4W и другие

Компонент	Описание	Производитель	PDF
V30120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
V30120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A	Vishay Siliconix
VB30120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VB30120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A	Vishay Siliconix
VF30120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A	Vishay Siliconix
VF30120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VI30120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier	Vishay Siliconix
VI30120C-E3/4W	Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A	Vishay Siliconix